| Компонент | Описание | Производитель | PDF | Buy |
| 3EZ6.8 | Silicon-Power-Z-Diodes (non-planar technology) | Diotec Semiconductor |  |  |
| 3EZ6.8 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 3EZ6.8 | SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 3EZ6.8 | Silicon-Power-Zener Diodes (non-planar technology) | Diotec Semiconductor | | |
| SMB3EZ6.8 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES | Shenzhen Taychipst Electronic Co., Ltd | | |
| 1SMB3EZ6.8 | SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 1SMB3EZ6.8 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 3EZ6.8D | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D1 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-1% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D10 | SILICON ZENER DIODES | EIC discrete Semiconductors | | |
| 3EZ6.8D2 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-2% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D3 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-3% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D4 | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance. | Jinan Gude Electronic Device | | |
| 3EZ6.8D5 | SILICON ZENER DIODES | EIC discrete Semiconductors | | |
| 3EZ6.8D5 | 3W SILICON ZENER DIODE | Jinan Gude Electronic Device | | |
| 3EZ6.8D5 | SILICON ZENER DIODES | SynSemi, Inc. | | |
| 3EZ6.8D5 | Ref/Reg Diode, P(D) = 1W | New Jersey Semi-Conductor Products, Inc. | | |
| 3EZ6.8_09 | SILICON ZENER DIODES | Pan Jit International Inc. | | |
| 1SMB3EZ6.8_09 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES | Pan Jit International Inc. | | |
