Компонент | Описание | Производитель | PDF | Buy |
07641641 | tyco electronics contents | Tyco Electronics | | |
0878341641 | 2.54mm (.100) Pitch C-Grid^ Header, Dual Row, Low Profile, Vertical, Shrouded, without PCB Locator, without End Window, 0.13lm (5l) Gold (Au) Flash Plating | Molex Electronics Ltd. | | |
TMS66416410 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES | Texas Instruments | | |
UPD44164182F5-E40-EQ1 | 18M-BIT DDRII SRAM 2-WORD BURST OPERATION | NEC | | |
UPD44164182F5-E50-EQ1 | 18M-BIT DDRII SRAM 2-WORD BURST OPERATION | NEC | | |
UPD44164182F5-E60-EQ1 | 18M-BIT DDRII SRAM 2-WORD BURST OPERATION | NEC | | |
UPD44164184F5-E40-EQ1 | 18M-BIT DDRII SRAM 4-WORD BURST OPERATION | NEC | | |
UPD44164184F5-E50-EQ1 | 18M-BIT DDRII SRAM 4-WORD BURST OPERATION | NEC | | |
UPD44164184F5-E60-EQ1 | 18M-BIT DDRII SRAM 4-WORD BURST OPERATION | NEC | | |
UPD44164185F5-E40-EQ1 | 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION | NEC | | |
UPD44164185F5-E50-EQ1 | 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION | NEC | | |
UPD44164185F5-E60-EQ1 | 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION | NEC | | |
VG36641641BT | CMOS Synchronous Dynamic RAM | Vanguard International Semiconductor | | |
VG36641641DT | CMOS Synchronous Dynamic RAM | Vanguard International Semiconductor | | |
VG36641641DT | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |
VG36641641DT-6 | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |
VG36641641DT-7 | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |
VG36641641DT-7L | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |
VG36641641DT-8H | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |
VG36641641DTL-6 | CMOS Synchronous Dynamic RAM | List of Unclassifed Manufacturers | | |