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Компонент | Описание | Производитель | PDF | Buy |
4763-03 | Power Transformers Ch Frame | Filtran LTD | | |
BAP63-03 | Silicon PIN diode | Leshan Radio Company | | |
BAP63-03 | Silicon PIN diode | E-Tech Electronics LTD | | |
BAP63-03 | Silicon PIN diode | NXP Semiconductors | | |
BAP63-03 | RF Manual 16th edition | NXP Semiconductors | | |
8863-03-100B | 1.27mm (.050") Pitch Round Conductor Flat Cable | Molex Electronics Ltd. | | |
1772-NM-63-03-FC-PM | DWDM High Power CW Source Laser | Emcore Corporation | | |
1772-NM-63-03-FC-PM | DWDM High Power CW Source Laser | Emcore Corporation | | |
1782A-NM-063-03-FC-PM | DWDM High Power CW Source Laser | Emcore Corporation | | |
1782B-NM-063-03-FC-PM | DWDM High Power CW Source Laser | Emcore Corporation | | |
51163-0300 | 2.50mm (.098") Pitch Wire-to-Board Receptacle Housing, Positive Lock, With Retainer3 Circuits | Molex Electronics Ltd. | | |
35363-0352 | 2.00mm (.079") Pitch Sherlock Wire-to-Board Header, Right Angle, with PositiveLock, 3 Circuits, Lead-free, Red, Glass-filled | Molex Electronics Ltd. | | |
35363-0354 | 2.00mm (.079") Pitch Sherlock Wire-to-Board Header, Right Angle, with PositiveLock, 3 Circuits, Lead-free, Blue, Glass-filled | Molex Electronics Ltd. | | |
35363-0360 | Includes CLIK-Mate, PanelMate,Sherlock, Pico-Spox and MicroClasp Prodcut | MolexKits | | |
35363-0360 | 2.00mm (.079") Pitch Sherlock Wire-to-Board Header, Right Angle, with PositiveLock, 3 Circuits, Lead-free | Molex Electronics Ltd. | | |
35363-0360 | Secure and Space Saving Vertical and Right Angle Header, and Receptacle | MolexKits | | |
54363-0389 | 0.50mm (.020") Pitch SlimStack Receptacle, Surface Mount, Dual Row, Vertical, 2.00and 3.00mm (.079 and .118") Stacking Heights, with Solder Tabs, 30 Circuits, Leadfree | Molex Electronics Ltd. | | |
PCM-3663-03A1 | PC/104-Plus PCMCIA Module | List of Unclassifed Manufacturers | | |
PCM-3663-03A1E | Twin 10/100Base-T LAN Module Dual GbE Module | Advantech Co., Ltd. | | |
BAR63-03W | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group | | |
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