| Компонент | Описание | Производитель | PDF | Buy |
| CEB60N10 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |  |  |
| CEP60N10 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology | | |
| STH60N10 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
| UTT60N10 | 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR | Unisonic Technologies | | |
| STW60N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics | | |
| IXUC60N10 | Trench Power MOSFET ISOPLUS220-TM | IXYS Corporation | | |
| SSRF60N10 | N-Ch Enhancement Mode Power MOSFET | SeCoS Halbleitertechnologie GmbH | | |
| S1PDB60N10 | Single Phase Bridge Rectifiers Modules | Sirectifier Semiconductors | | |
| SUP60N10-16L | N-Channel 100-V (D-S) 175 Degree Celcious MOSFET | Vishay Siliconix | | |
| SUM60N10-17 | N-Channel 100-V (D-S) 175C MOSFET | Vishay Siliconix | | |
| SUM60N10-17 | N-Channel 100-V (D-S) 175 `C MOSFET | Vishay Siliconix | | |
| SUM60N10-17_08 | N-Channel 100-V (D-S) 175 `C MOSFET | Vishay Siliconix | | |
| AM60N10-70PCFM | N-Channel 100-V (D-S) MOSFET | Analog Power | | |
| FGL60N100BNTD | NPT-Trench IGBT | Fairchild Semiconductor | | |
| FGL60N100D | Electrical Characteristics of IGBT | Fairchild Semiconductor | | |
| R1160N101A | 3-MODE 200mA LDO REGULATOR | RICOH electronics devices division | | |
| R1160N101A | SOT23-5 3-MODE 200mA LDO REGULATOR | RICOH electronics devices division | | |
| R1160N101A-TR | SOT23-5 3-MODE 200mA LDO REGULATOR | RICOH electronics devices division | | |
| R1160N101B | SOT23-5 3-MODE 200mA LDO REGULATOR | RICOH electronics devices division | | |
| R1160N101B | 3-MODE 200mA LDO REGULATOR | RICOH electronics devices division | | |
