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Компонент | Описание | Производитель | PDF | Buy |
L6611D | DIGITALLY PROGRAMMABLE SECONDARY HOUSEKEEPING CONTROLLER | STMicroelectronics | | |
UN611D | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor | | |
UNR611D | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic Semiconductor | | |
NJM2611D | SERVO MOTOR CONTROLLER | New Japan Radio | | |
K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661611D | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
SHD122611D | HIGH CURRENT HERMETIC SCHOTTKY | Sensitron | | |
SHD123611D | HIGH CURRENT HERMETIC SCHOTTKY | Sensitron | | |
SHD124611D | HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage | Sensitron | | |
SHD125611D | HERMETIC POWER SCHOTTKY RECTIFIER 150`C Maximum Operation Temperature | Sensitron | | |
K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
TC2611D-750M | TOROID INDUCTORS | Productwell Precision Elect.CO.,LTD | | |
K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | | |
K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
K4F171611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | | |
K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | | |
K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
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