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| Результаты поиска для 61882 | |
| Компонент | Описание | Производитель | PDF | Buy |
| K7Q161882 | 512Kx36 & 1Mx18 QDR b2 SRAM | Samsung semiconductor |  |  |
| 0050361882 | 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Vertical, without Snap-in Plastic Peg PCB Lock | Molex Electronics Ltd. | | |
| MAL209618821E3 | Aluminum Capacitors Power Long Life 4-Terminal Snap-In | Vishay Siliconix | | |
| K7Q161882A | 512Kx36 & 1Mx18 QDR b2 SRAM | Samsung semiconductor | | |
| K7I161882B | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7J161882B | 512Kx36 & 1Mx18 DDR II SIO b2 SRAM | Samsung semiconductor | | |
| K7J161882B | 512Kx36 & 1Mx18 DDR II SIO b2 SRAM | Samsung semiconductor | | |
| K7R161882B | 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM | Samsung semiconductor | | |
| K7R161882B | 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM | Samsung semiconductor | | |
| K7I161882B-FC16 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7I161882B-FC20 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7I161882B-FC25 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7I161882B-FC30 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM | Samsung semiconductor | | |
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