| Компонент | Описание | Производитель | PDF | Buy |
| M38C80E4 | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER | Renesas Technology Corp |  |  |
| M39P0R1080E4 | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
| M39P0R9080E4 | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
| M38180E4-FP | Single-chip 8-bit CMOS microcomputer, 16384 PROM, 192RAM | Mitsubishi Electric Semiconductor | | |
| M38180E4-FS | Single-chip 8-bit CMOS microcomputer, 16384 PROM, 192 RAM | Mitsubishi Electric Semiconductor | | |
| M38C80E4-XXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER | Mitsubishi Electric Semiconductor | | |
| RF80E471MDN1XX | FUMCTIONAL POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS | Nichicon corporation | | |
| SLP152M180E4P3 | 105 jC Aluminum Electrolytic Snap-In Capacitors | Cornell Dubilier Electronics | | |
| SLP472M080E4P3 | 105 jC Aluminum Electrolytic Snap-In Capacitors | Cornell Dubilier Electronics | | |
| SLP472M080E4P3 | Type SLP 105 `C Snap-In Aluminum Electrolytic | Cornell Dubilier Electronics | | |
| SLPX562M080E4P3 | Type SLPX 85 `C Snap-In Aluminum Electrolytic | Cornell Dubilier Electronics | | |
| M39P0R9080E4ZASE | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
| M39P0R1080E4ZASE | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
| M39P0R1080E4ZASF | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
| M39P0R9080E4ZASF | 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package | Numonyx B.V | | |
