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| A-IE-S-DIP DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
A-IE-S-DIP | NEW RELEASE PER ECA | Assmann Electronics Inc. |  |  |
| *A-I*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| E-312A-I | E-312A-I 2PDT, 10 Amps, 440 VAC | Tyco Electronics | | |
| HY62256A-I | DRAM & SRAM MEMORY | List of Unclassifed Manufacturers | | |
| RC-140WA-I | Half-size Wallmount Chassis with 4-slot Backplane, 80W P/S Provides PICMG1.3 Half-size Backplane | BOSER Technology Co., Ltd | | |
| LP62S1024A-I | 128K X 8 BIT LOW VOLTAGE CMOS SRAM | AMIC Technology | | |
| LP62S2048A-I | 256K X 8 BIT LOW VOLTAGE CMOS SRAM | AMIC Technology | | |
| K1S161611A-I | 1Mx16 bit Uni-Transistor Random Access Memory | Samsung semiconductor | | |
| K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung semiconductor | | |
| K9F2G08U0A-I | FLASH MEMORY | Samsung semiconductor | | |
| K9G4G08U0A-I | Preliminary FLASH MEMORY | Samsung semiconductor | | |
| K9K8G08U1A-I | FLASH MEMORY | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K1S1616B1A-I | 1Mx16 bit Uni-Transistor Random Access Memory | Samsung semiconductor | | |
| K9F4G08U0A-I | FLASH MEMORY | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9L8G08U1A-I | Preliminary FLASH MEMORY | Samsung semiconductor | | |
| LP62E16128A-I | 128K X 16 BIT LOW VOLTAGE CMOS SRAM | AMIC Technology | | |
| HY62SF16201A-I | 128Kx16bit full CMOS SRAM | Hynix Semiconductor | | |
| HY62SF16403A-I | 256Kx16bit full CMOS SRAM | Hynix Semiconductor | | |
| HY62SF16806A-I | 512Kx16bit full CMOS SRAM | Hynix Semiconductor | | |
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