| Компонент | Описание | Производитель | PDF | Buy |
| GS71108AJ-7 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers |  |  |
| GS71108AJ-7 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | | |
| GS71116AJ-7 | 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | | |
| GS72108AJ-7 | 256K x 8 2Mb Asynchronous SRAM | List of Unclassifed Manufacturers | | |
| GS72116AJ-7 | 128K x 16 2Mb Asynchronous SRAM | GSI Technology | | |
| GS74116AJ-7 | 256K x 16 4Mb Asynchronous SRAM | GSI Technology | | |
| GS74104AJ-7 | 7ns 1M x 4 4Mb asynchronous SRAM | GSI Technology | | |
| GS74108AJ-7 | 7ns 512K x 8 4Mb asynchronous SRAM | GSI Technology | | |
| GS74108AJ-7 | 7ns 512K x 8 4Mb asynchronous SRAM | GSI Technology | | |
| HM514260AJ-7 | 262, 144-Word x 16-Bit Dynamic Random Access Memory | Hitachi Semiconductor | | |
| HM514400AJ-7 | 1,048,576-WORD x 4-BIT DYNAMIC RAM | Hitachi Semiconductor | | |
| HM5118165AJ-7 | 1048576-word x 16-bit Dynamic Random Access Memory | Hitachi Semiconductor | | |
| HM51S4260AJ-7 | 262, 144-Word x 16-Bit Dynamic Random Access Memory | Hitachi Semiconductor | | |
| PEEL22CV10AJ-7 | PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
| PEEL22CV10AJ-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
| PEEL22CV10AJ-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
| GM71C18163AJ-7 | 1,048,576 words x 16 bit DRAM, 70ns | LG Semicon Co.,Ltd. | | |
| KM416V1004AJ-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung semiconductor | | |
| HY62256AJ-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | List of Unclassifed Manufacturers | | |
| TC514402AJ-70 | 1,048,576 WORD x 4 BIT DYNAMIC RAM | Toshiba Semiconductor | | |
