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| AP28F010-120 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
AP28F010-120 | 1024(128K x 8) CMOS flash memory. Access speed 120 ns | Intel Corporation |  |  |
| *AP28*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| AP2851GO | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | | |
| AP2852GO | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | | |
| AP2864I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | | |
| AP28B0155 | 5.5 MHZ VIDEO DELAY LINES | Faraday Technology | | |
| AP28F010-120 | 1024(128K x 8) CMOS flash memory. Access speed 120 ns | Intel Corporation | | |
| AP28F010-150 | 1024(128K x 8) CMOS flash memory. Access speed 150 ns | Intel Corporation | | |
| AP28G40GEM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP28G40GEO | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP28G45EM | N-CHANNEL INSULATED GATE | Advanced Power Electronics Corp. | | |
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP28G45GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
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