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| BCR30 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
BCR30 | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| *BCR30*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
BCR30 | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
BCR30 | MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
S29GL032M10BBCR30 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 lm MirrorBit Process Technology | SPANSION | | |
S29GL032M10FBCR30 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 lm MirrorBit Process Technology | SPANSION | | |
BCR30AM | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
BCR30AM | Triac 30 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
BCR30AM-12 | Triac 30 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
BCR30AM-12L | Triac 30 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
BCR30AM-12LA | Triac Medium Power Use | Renesas Technology Corp | | |
BCR30AM-12LA-A8 | Triac Medium Power Use | Renesas Technology Corp | | |
BCR30AM-12LB | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
BCR30AM-12LB-A8 | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
BCR30AM-8 | Triac 30 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
BCR30AM-8L | Triac 30 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
BCR30GM | MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
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