| Компонент | Описание | Производитель | PDF | Buy |
| HM534253BJ-6 | 1 M VRAM (256-kword x 4-bit) | Elpida Memory |  |  |
| HM538123BJ-6 | 1 M VRAM (128-kword x 8-bit) | Hitachi Semiconductor | | |
| HM5118160BJ-6 | 1048576-word x 16-bit Dynamic Random Access Memory | Hitachi Semiconductor | | |
| HM5118165BJ-6 | 1048576-word x 16-bit Dynamic Random Access Memory | Hitachi Semiconductor | | |
| M5M467160BJ-6 | FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM | Mitsubishi Electric Semiconductor | | |
| KM416V1200BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung semiconductor | | |
| KM416C1200BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung semiconductor | | |
| KM416V1000BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung semiconductor | | |
| KM416C1000BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung semiconductor | | |
| KM416C1004BJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416C1204BJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416V1004BJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416V1204BJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| GM71C4256BJ-60 | New Generation Dynamic RAM | LG Semicon Co.,Ltd. | | |
| HYB314100BJ-60 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM | Siemens Semiconductor Group | | |
| HYB314175BJ-60 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh | Siemens Semiconductor Group | | |
| HYB314405BJ-60 | 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
| HYB314400BJ-60 | 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
| HYB514100BJ-60 | 4M x 1-Bit Dynamic RAM | Siemens Semiconductor Group | | |
| HYB514171BJ-60 | 256k x 16-Bit Dynamic RAM | Siemens Semiconductor Group | | |
