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| CG632U025R3C DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
CG632U025R3C | Reliable Screw Terminal Aluminum Electrolytic Capacitor 85 ЉC, Screw Terminal Capacitors | Cornell Dubilier Electronics |  |  |
| *CG6*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| NH00CG6 | NH Fuse Links | Littelfuse | | |
| DBCMJC33CG6 | PIN HEADERS | Dubilier | | |
| K4R441869B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung semiconductor | | |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
| K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
| K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
| K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
| K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
| K4R271669A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| MR16R0824BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | | |
| MR16R0826BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | | |
| MR16R0828BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | | |
| K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R881869M-NBCCG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| MR16R082CGBN1-CG6 | RAMBUS MODULE | Samsung semiconductor | | |
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