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CM100TU-12F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-12F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-12F | Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM100TU-12F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-12H | Six IGBTMOD 100 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM100TU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-12H_12 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-24F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-24F | MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-24F | Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM100TU-24F_09 | MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM100TU-24H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-24H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-24H | Six IGBTMOD 100 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM100TU-24H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM100TU-24H_12 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |