CT-6O DATASHEET

Компонент	Описание	Производитель	PDF	Buy
CT-6	CORRUGATED TUBE	Richco, Inc.

CT-6: Расширенные результаты

Компонент	Описание	Производитель	PDF	Buy
CT-6	CORRUGATED TUBE	Richco, Inc.
HY57V56820CT-6	4 Banks x 8M x 8Bit Synchronous DRAM	Hynix Semiconductor
KM416C1004CT-6	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms	Samsung semiconductor
GM71C17400CT-6	4,194,304 words x 4 bit CMOS dynamic RAM, 60ns	Hynix Semiconductor
GM71C17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns	Hynix Semiconductor
GM71C17800CT-6	CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns	Hynix Semiconductor
KM416V1000CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns	Samsung semiconductor
KM416C1200CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns	Samsung semiconductor
KM416C1000CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns	Samsung semiconductor
KM416V1200CT-6	1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns	Samsung semiconductor
GM71V17403CT-6	CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns	Hynix Semiconductor
GM71C18163CT-6	1,048,576 words x 16 bit CMOS DRAM, 60ns	Hynix Semiconductor
KM416C1204CT-6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416V1204CT-6	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416V1004CT-6	3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416C1004CT-6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
HY57V561620CT-6	4 Banks x 4M x 16Bit Synchronous DRAM	Hynix Semiconductor
HY57V643220CT-6	4 Banks x 512K x 32Bit Synchronous DRAM	Hynix Semiconductor
HYB39S16160CT-6	1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications	Siemens Semiconductor Group
GM71CS17800CT-6	CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns	Hynix Semiconductor

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CT-6O DATASHEET

*CT-6*: Расширенные результаты

CT-6: Расширенные результаты