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| Результаты поиска для E4C-N8 | |
| Компонент | Описание | Производитель | PDF | Buy |
| W4NXE4C-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc |  |  |
| CM1200E4C-34N | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM1000E4C-66R | HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE4C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
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