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Компонент | Описание | Производитель | PDF | Buy |
CSNE661 | Solid State Sensors Closed Loop Current Sensors | Honeywell Solid State Electronics Center | | |
K4E661611D | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661611D-TC60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612B-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612B-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4E661612B-TC50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung semiconductor | | |
K4E661612B-TC60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung semiconductor | | |
K4E661612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung semiconductor | | |
K4E661612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | | |
K4E661612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-L45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-L50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
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