Результаты поиска для ECI-101

Компонент	Описание	Производитель	PDF	Buy
K6R1016V1D-JECI08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.	Samsung semiconductor
K7J641882M-FECI16	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7J643682M-FECI16	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7J641882M-FECI20	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7J643682M-FECI20	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7I643684M-FECI25	72Mb DDRII SRAM Specification	Samsung semiconductor
K7J643682M-FECI25	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7I641884M-FECI25	72Mb DDRII SRAM Specification	Samsung semiconductor
K7J641882M-FECI25	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7I643684M-FECI30	72Mb DDRII SRAM Specification	Samsung semiconductor
K7J643682M-FECI30	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7I641884M-FECI30	72Mb DDRII SRAM Specification	Samsung semiconductor
K7J641882M-FECI30	72Mb M-die DDRII SRAM Specification	Samsung semiconductor
K7S3218T4C-FECI33	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7S3236T4C-FECI33	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7S3218T4C-FECI40	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7S3236T4C-FECI40	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7S3236T4C-FECI45	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
LX64ECIF1003	High Performance Interfacing and Switching	Lattice Semiconductor
LX256ECIF1003	High Performance Interfacing and Switching	Lattice Semiconductor

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