| Компонент | Описание | Производитель | PDF | Buy |
| AP6800GEO | Low on-resistance, Optimal DC/DC battery application | Advanced Power Electronics Corp. |  |  |
| AP9920GEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | | |
| AP9926GEO | Capable of 2.5V Gate Drive, Surface Mount Package | Advanced Power Electronics Corp. | | |
| AP9928GEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | | |
| AP28G40GEO | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| SSM9922GEO | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | Silicon Standard Corp. | | |
| SSM9926GEO | N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | Silicon Standard Corp. | | |
| SSM9928GEO | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | Silicon Standard Corp. | | |
| HSH1002GEO | Lamps for Photolithography | PerkinElmer Optoelectronics | | |
| AP9922GEO-HF | Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application | Advanced Power Electronics Corp. | | |
| AP9923GEO-HF | Small & Thin Package, Capable of 1.8V Gate Drive | Advanced Power Electronics Corp. | | |
| AP9926GEO-HF | Capable of 2.5V Gate Drive, Surface Mount Package | Advanced Power Electronics Corp. | | |
| AP9938GEO-HF | Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application | Advanced Power Electronics Corp. | | |
| AP26G40GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP28G45GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP30G40GEO-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics Corp. | | |
| AP9922AGEO-HF | Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application | Advanced Power Electronics Corp. | | |
| PC87364EB-GEODE | PC87364 128-Pin LPC SuperI/O with Extended Wake-up and Protection Support [Preliminary] | National Semiconductor | | |
