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| H5N1506P-E DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
H5N1506P-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp |  |  |
| *H5N1*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IXFH5N100 | HIPERFET Power MOSFTETs | IXYS Corporation | | |
| IXTH5N100 | Standard Power MOSFET | IXYS Corporation | | |
| IXTH5N100A | Standard Power MOSFET | IXYS Corporation | | |
| IXFH5N100P | Polar Power MOSFET HiPerFET | IXYS Corporation | | |
| SGH5N120RUF | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| SGH5N120RUFD | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| H5N1503P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| H5N1503P-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| H5N1506P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| H5N1506P-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | | |
| IXBH5N160G | High Voltage BIMOSFETTM | IXYS Corporation | | |
| LLS0603-FH5N1C | Multilayer Chip Inductors | TOKO, Inc | | |
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