| Компонент | Описание | Производитель | PDF | Buy |
| S1J-L | 1 Amp Silicon Rectifier 50 to 1000 Volts | Micro Commercial Components |  |  |
| S2J-L | 1.5 Amp Glass Passivated Silicon Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| ER1J-L | 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts | Micro Commercial Components | | |
| ER2J-L | 2 Amp Super Fast Recovery Rectifier 50 to 600 Volts | Micro Commercial Components | | |
| FR2J-L | 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| FS1J-L | 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| FS2J-L | 2.0 Amp Fast Recovery Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| GS1J-L | 1.0 Amp Glass Passivated Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| GS2J-L | 2.0 Amp Glass Passivated Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| AH337J-L | Single Phase Hall Effect Switch | Anachip Corp | | |
| MM2102AJ-L | 1024-Bit (1024 x 1) Static RAMs | National Semiconductor | | |
| SP317J-L/TR | 3-Terminal 1 Amp Adjustable Voltage Regulator | Sipex Corporation | | |
| SJPJ-L3 | Schottky Barrier Rectifier | Sanken electric | | |
| KM416C10CJ-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| KM416C12CJ-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| KM416V10CJ-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| KM416V12CJ-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| KM416C1004BJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416C1204BJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416C1204CJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
