| Компонент | Описание | Производитель | PDF | Buy |
| M44S05K4F1 | MX44 CONNECTOR 025 SOCKET CONTACT | Japan Aviation Electronics Industry, Ltd. |  |  |
| M44S05K4F1 | Compact Waterproof Automotive Connectors with Low Pin Counts | Japan Aviation Electronics Industry, Ltd. | | |
| M25P10K4F1 | PIN INNER CONTACT | Japan Aviation Electronics Industry, Ltd. | | |
| K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F160411C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411C-B | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411C-F | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
