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| K4F160811D-B DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor |  |  |
| *K4F160*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| K4F160411C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411C-B | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411C-F | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160412C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160412C-B | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160412C-F | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160811D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4F160812D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
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