 |
Поиск Datasheets |
|
getting query K4R7
searching datasheet
pdf is found, procesing
please wait...
| Результаты поиска для K4R7 | |
| Компонент | Описание | Производитель | PDF | Buy |
| II2012K4R7 | SURFACE MOUNT INDUCTORS II2012 Series: 0805 Multilayer | RFE international |  |  |
| II3216K4R7 | SURFACE MOUNT INDUCTORS II3216 Series: 1206 Multilayer | RFE international | | |
| K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-FBCCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-FCM8 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-FCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-GCM8 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-GCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| 02011K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02011K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02011K4R7AASTR | High purity of electrodes for very low and repeatable | AVX Corporation | | |
| 02013K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02013K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02013K4R7AASTR | High purity of electrodes for very low and repeatable | AVX Corporation | | |
| 02015K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02015K4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 02015K4R7AASTR | High purity of electrodes for very low and repeatable | AVX Corporation | | |
| 0201YK4R7AASTR | Thin-Film Technology | AVX Corporation | | |
| 0201YK4R7AASTR | Thin-Film Technology | AVX Corporation | | |
Поиск занял 0.0183 сек.
|
|
|
|
|
