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| K4R881869M-NCG6 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor |  |  |
| *K4R*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
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