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| L8828-62 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
L8828-62 | CW LASER DIODES | Hamamatsu Corporation |  |  |
| *L882*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| GL882 | NPN EPITAXIAL PLANAR TRANSISTOR | GTM CORPORATION | | |
| P83CL882 | 80C51 Ultra Low Power ULP telephony controller | NXP Semiconductors | | |
| FLD5F15CX-L8820 | 1,550nm Continuous Wave DFB Laser | Eudyna Devices Inc | | |
| L8821P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | Polyfet RF Devices | | |
| B32602L8822 | Film Capacitors Metallized Polyester Film Capacitors (MKT) | EPCOS | | |
| B32672L8822 | Film Capacitors Metallized Polyester Film Capacitors (MKT) | EPCOS | | |
| L8828-04 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-06 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-07 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-41 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-42 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-61 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-62 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-71 | CW LASER DIODES | Hamamatsu Corporation | | |
| L8828-72 | CW LASER DIODES | Hamamatsu Corporation | | |
| P83CL882T/001 | 80C51 Ultra Low Power ULP telephony controller | NXP Semiconductors | | |
| 350JL882U6R3C | 105 ЉC, Low Inductance, Radial, Aluminum Electrolytic | List of Unclassifed Manufacturers | | |
| 350JL882U6R3C | Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top | Cornell Dubilier Electronics | | |
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