| Компонент | Описание | Производитель | PDF | Buy |
| PM563 | Single, dual and triple output 1 to 10.5 Watt AC/DC encapsulated modules | Artesyn Technologies |  |  |
| SM563 | 4-Bit Single-Chip Microcomputer(LCD Driver) | Sharp Electrionic Components | | |
| CTLSH1-40M563 | SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER | Central Semiconductor Corp | | |
| CTLT3820-M563 | SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR | Central Semiconductor Corp | | |
| CTLDM7120-M563 | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | Central Semiconductor Corp | | |
| BCM56300 | 24-PORT GIGABIT ETHERNET MULTILAYER SWITCH | Broadcom Corporation. | | |
| EM56300A | TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER | ELAN Microelectronics Corp | | |
| BCM56301 | FOUR 10-GIGABIT ETHERNET/HIGIG PORTS | Broadcom Corporation. | | |
| BCM56302 | 24-PORT GIGABIT ETHERNET MULTILAYER SWITCH WITH TWO 10-GIGABIT ETHERNET/HIGIGPORTS | Broadcom Corporation. | | |
| BCM56303 | 24-PORT GIGABIT ETHERNET MULTILAYER SWITCH WITH THREE 10-GIGABIT ETHERNET/HIGIGPORTS | Broadcom Corporation. | | |
| BCM56304 | 24-PORT GbE MULTILAYER SWITCH WITH FOUR 10-GbE/HiGig PORTS | Broadcom Corporation. | | |
| BCM5632 | 12 GIGABIT 1 10-GIGABIT SWITCHING PROCESSOR | Broadcom Corporation. | | |
| BCM5632 | FOUR-CHANNEL 3.125 GIGABIT ETHERNET CMOS TRANSCEIVER | Broadcom Corporation. | | |
| K4M563233D | 8Mx32 Mobile SDRAM 90FBGA | Samsung semiconductor | | |
| K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
| K4M563233E-C | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
| K4M563233E-E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
| K4M563233E-F1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
| K4M563233E-F1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
| K4M563233E-F75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
