| Компонент | Описание | Производитель | PDF | Buy |
| M5M29F25611VP | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY | Mitsubishi Electric Semiconductor |  |  |
| M5M29FB800FP | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800RV-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800RV-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FB800VP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
| M5M29FT800FP | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
| M5M29FT800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800FP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800RV-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800RV-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
| M5M29FT800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | | |
| M5M29FT800VP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi Electric Semiconductor | | |
