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Компонент | Описание | Производитель | PDF | Buy |
1N5116 | 3 WATT GLASS ZENER DIODES | Microsemi Corporation | | |
2N5116 | SINGLE P-CHANNEL JFET | Linear Integrated Systems | | |
2N5116 | P-CHANNEL J-FET | Microsemi Corporation | | |
2N5116 | P-CHANNEL J-FET | Microsemi Corporation | | |
2N5116 | P-CHANNEL JFET | New Jersey Semi-Conductor Products, Inc. | | |
2N5116 | N-CHANNEL JFET | Intersil Corporation | | |
UN5116 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor | | |
UN5116 | Silicon PNP epitaxial planar type | Panasonic Semiconductor | | |
MUN5116 | Bias Resistor Transistor PNP Silicon | Weitron Technology | | |
MUN5116 | Digital Transistors (BRT) R1 = 4.7 k, R2 = k | ON Semiconductor | | |
IFN5116 | P-Channel silicon junction field-effect transistor | InterFET Corporation | | |
X2N5116 | 30 V, P-Channel JFET switch | Calogic, LLC | | |
JAN2N5116 | P-CHANNEL J-FET | Microsemi Corporation | | |
JANTX2N5116 | P-CHANNEL J-FET | Microsemi Corporation | | |
JANTXV2N5116 | P-CHANNEL J-FET | Microsemi Corporation | | |
K4N51163QC-ZC | 512Mbit gDDR2 SDRAM | Samsung semiconductor | | |
K4N51163QC-ZC25 | 512Mbit gDDR2 SDRAM | Samsung semiconductor | | |
K4N51163QC-ZC2A | 512Mbit gDDR2 SDRAM | Samsung semiconductor | | |
K4N51163QC-ZC33 | 512Mbit gDDR2 SDRAM | Samsung semiconductor | | |
K4N51163QC-ZC36 | 512Mbit gDDR2 SDRAM | Samsung semiconductor | | |
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