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| Результаты поиска для N80E | |
| Компонент | Описание | Производитель | PDF | Buy |
| MTB4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS | Motorola, Inc |  |  |
| MTD1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM | Motorola, Inc | | |
| MTP1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS | Motorola, Inc | | |
| MTP4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM | Motorola, Inc | | |
| MTW4N80E | TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | Motorola, Inc | | |
| MTW7N80E | TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM | Motorola, Inc | | |
| MGP7N80E | Insulated gate bipolar transistor | Motorola, Inc | | |
| MGP4N80E | Insulated gate bipolar transistor | Motorola, Inc | | |
| MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM | Motorola, Inc | | |
| FMV10N80E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| MGP21N80E | Insulated gate bipolar transistor | Motorola, Inc | | |
| W963A6BBN80E | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM | Winbond | | |
| W963L6ABN80E | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM | Winbond | | |
| W964B6BBN80E | 1M WORD X 16BIT LOW POWER PSEUDO SRAM | Winbond | | |
| MTB4N80E1 | TMOS POWER FET 4.0 AMPERES 800 VOLTS | Motorola, Inc | | |
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