NTGD4167CT1G DATASHEET

Power MOSFET Complementary, 30 V, 2.9/−2.2 A, TSOP−6 Dual

ON Semiconductor

High Efficiency DC-DC Converters

ON Semiconductor

Power MOSFET 8 V, ^.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6

ON Semiconductor

Power MOSFET 8 V, ^.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6

ON Semiconductor

Power MOSFET 8 V, ^.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6

ON Semiconductor

High Efficiency DC-DC Converters

ON Semiconductor

Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual

ON Semiconductor

Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual

ON Semiconductor

Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6

ON Semiconductor

Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6

ON Semiconductor

Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6

ON Semiconductor

Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6

ON Semiconductor

Power MOSFET Complementary, 20 V, 3.5/−2.7 A, TSOP−6 Dual

ON Semiconductor

Power MOSFET Complementary, 20 V, 3.5/−2.7 A, TSOP−6 Dual

ON Semiconductor

Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6

ON Semiconductor

Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6

ON Semiconductor

Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6

ON Semiconductor

Power MOSFET Complementary, 30 V, 2.9/−2.2 A, TSOP−6 Dual

ON Semiconductor

Power MOSFET Complementary, 30 V, 2.9/−2.2 A, TSOP−6 Dual

ON Semiconductor

Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6

ON Semiconductor

Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6

ON Semiconductor