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| RF3322 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
RF3322 | CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER | RF Micro Devices | | |
| *RF33*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
PQ3RF33 | 3.3V Output, High Output Current (2A, 3.5A) Type Low Power-loss Voltage Regulators | Sharp Electrionic Components | | |
PQ3RF33 | 3.3V Output, High Output Current(2A, 3.5A)Type Low Power-loss Voltage Regulators | Sharp Electrionic Components | | |
IRF330 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF330 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
IRF330 | 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
IRF330 | TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A) | International Rectifier | | |
IRF330-333 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
RF3300-2 | 3V 900MHz LINEAR AMPLIFIER MODULE | RF Micro Devices | | |
RF3300-3 | 3V 1900MHz LINEAR AMPLIFIER MODULE | RF Micro Devices | | |
RF3300-3PCBA | 3V 1900MHz LINEAR AMPLIFIER MODULE | RF Micro Devices | | |
IRF3305 | AUTOMOTIVE MOSFET | International Rectifier | | |
IRF3305PBF | HEXFET^ Power MOSFET | International Rectifier | | |
IRF331 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF331 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
MRF331 | The RF Line | Motorola, Inc | | |
RF3315 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
RF3315 | BROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
RF3315 | ROADBAND HIGH LINEARITY AMPLIFIER | RF Micro Devices | | |
IRF3315 | Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | International Rectifier | | |
IRF3315L | Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) | International Rectifier | | |
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