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Мой поиск: STN4NE03


STN4NE03 DATASHEET

КомпонентОписаниеПроизводительPDFBuy
STN4NE03
N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET
STMicroelectronics

*STN4*: Расширенные результаты

КомпонентОписаниеПроизводительPDFBuy
TC55VBM316ASTN40
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Toshiba Semiconductor
TC55VCM216ASTN40
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Toshiba Semiconductor
TC55VEM208ASTN40
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Toshiba Semiconductor
TC55VCM208ASTN40
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
Toshiba Semiconductor
STN4346
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4392
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4402_V1
N Channel Enhancement Mode MOSFET
List of Unclassifed Manufacturers
STN4412
N Channel Enhancement Mode MOSFET
Stanson Technology
STN4412S8RG
N Channel Enhancement Mode MOSFET
Stanson Technology
STN4412S8TG
N Channel Enhancement Mode MOSFET
Stanson Technology
STN4416
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4426
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4438
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4440
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4480
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STN4488L
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
Stanson Technology
BSTN44C60
BSTN6113
List of Unclassifed Manufacturers
BSTN44C80
BSTN6113
List of Unclassifed Manufacturers
BSTN44C86
BSTN6113
List of Unclassifed Manufacturers
STN4526
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
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