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| Результаты поиска для T0-4-8223-E | |
| Компонент | Описание | Производитель | PDF | Buy |
| NX60T0-32SAA9-SP | I/O Card Interface Connectors | Hirose Electric |  |  |
| J308_T0-92 | N-CHANNEL JFET | Micross Components | | |
| C2611-T0-92 | TRANSISTOR NPN | Jiangsu Changjiang Electronics Technology Co., Ltd | | |
| M312L5628BT0-A2 | DDR SDRAM Registered Module | Samsung semiconductor | | |
| SRH2512-1T0-BB | PRECISION HIGH VOLTAGE/ HIGH VALUE CHIP RESISTORS | RCD COMPONENTS INC. | | |
| SRH2512H-1T0-BB | PRECISION HIGH VOLTAGE/ HIGH VALUE CHIP RESISTORS | RCD COMPONENTS INC. | | |
| SRH2512-1T0-BT | PRECISION HIGH VOLTAGE/ HIGH VALUE CHIP RESISTORS | RCD COMPONENTS INC. | | |
| SRH2512H-1T0-BT | PRECISION HIGH VOLTAGE/ HIGH VALUE CHIP RESISTORS | RCD COMPONENTS INC. | | |
| M366S1623DT0-C1H | PC100 Unbuffered DIMM | Samsung semiconductor | | |
| M366S1724CT0-C1H | PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base) | Samsung semiconductor | | |
| M366S3323CT0-C1H | PC100 Unbuffered DIMM | Samsung semiconductor | | |
| M366S1623DT0-C1L | PC100 Unbuffered DIMM | Samsung semiconductor | | |
| M366S1724CT0-C1L | PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base) | Samsung semiconductor | | |
| M366S3323CT0-C1L | PC100 Unbuffered DIMM | Samsung semiconductor | | |
| M366S1623DT0-C75 | PC133 Unbuffered DIMM | Samsung semiconductor | | |
| M366S3323CT0-C75 | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD | Samsung semiconductor | | |
| M366S1623DT0-C7A | PC133 Unbuffered DIMM | Samsung semiconductor | | |
| M366S1623DT0-C80 | PC100 Unbuffered DIMM | Samsung semiconductor | | |
| M312L5128MT0-CA0 | DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC | Samsung semiconductor | | |
| M470L1714BT0-CA0 | 128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM) | Samsung semiconductor | | |
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