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| TIM5964-45SL DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
TIM5964-45SL | MICROWAVE POWR GaAs FET | Toshiba Semiconductor |  |  |
| *TIM5964-*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| TIM5964-12UL_09 | HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz | Toshiba Semiconductor | | |
| TIM5964-16UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-16UL | HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz | Toshiba Semiconductor | | |
| TIM5964-25UL | HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz | Toshiba Semiconductor | | |
| TIM5964-35SLA | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-35SLA-251 | MICROWAVE POWER GaAs FET TIM5964-35SLA-251 | Toshiba Semiconductor | | |
| TIM5964-45SL | MICROWAVE POWR GaAs FET | Toshiba Semiconductor | | |
| TIM5964-45SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-45SL_06 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-4A | MICROWAVE POWER GAAS FET | Toshiba Semiconductor | | |
| TIM5964-4UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-4UL_09 | HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz | Toshiba Semiconductor | | |
| TIM5964-60SL_08 | IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level | Toshiba Semiconductor | | |
| TIM5964-8 | MICROWAVE POWER GAAS FET | Toshiba Semiconductor | | |
| TIM5964-80SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM5964-80SL_08 | IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level | Toshiba Semiconductor | | |
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