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| W4NXE4C-LD00 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc |  |  |
| *W4NX*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| W4NXD8C-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8C-L000 | Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8C-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXD8G-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE4C-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE4C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE8C-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE8C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| W4NXE8C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
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