Компонент | Описание | Производитель | PDF | Buy |
EM565161BJ-70 | 512K x 16 Low Power SRAM | Etron Technology, Inc. | | |
LC321664BJ-70 | 1 MEG (65536 words x 16 bit) DRAM, fast page mode, byte write | Sanyo Semicon Device | | |
LC321667BJ-70 | 1 MEG (65536 words x 16 bit) DRAM, EDO page mode, byte write | Sanyo Semicon Device | | |
GM71C4256BJ-70 | New Generation Dynamic RAM | LG Semicon Co.,Ltd. | | |
HYB314405BJ-70 | 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB511000BJ-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M d 1-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB514400BJ-70 | 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM | Siemens Semiconductor Group | | |
HYB514405BJ-70 | 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB514800BJ-70 | 512kx8-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB314100BJ-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh | Siemens Semiconductor Group | | |
HYB514400BJ-70 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB514256BJ-70 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB3116405BJ-70 | 3.3V 4M x 4-Bit EDO-Dynamic RAM | Siemens Semiconductor Group | | |
HYB5116165BJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k Refresh | Siemens Semiconductor Group | | |
HYB5116400BJ-70 | 4M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB5116405BJ-70 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | Siemens Semiconductor Group | | |
HYB5117400BJ-70 | 4M x 4-Bit Dynamic RAM | Siemens Semiconductor Group | | |
HYB5117405BJ-70 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | Siemens Semiconductor Group | | |
HYB5117805BJ-70 | 2M x 8 - Bit Dynamic RAM 2k Refresh | Siemens Semiconductor Group | | |