| Компонент | Описание | Производитель | PDF | Buy |
| LTBKG | 100mA, Low Voltage, Very Low Dropout Linear Regulator | Linear Technology |  |  |
| SLCC16BKG | Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks | Vishay Siliconix | | |
| SLCC20BKG | Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks | Vishay Siliconix | | |
| SLCC24BKG | Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks | Vishay Siliconix | | |
| CYT6119BKG | 400mA Super LDO Linear Regulator | List of Unclassifed Manufacturers | | |
| CYT6118BKG | 500mA CMOS LDO Regulator | List of Unclassifed Manufacturers | | |
| KMM53216000BKG | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53216004BKG | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53232000BKG | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53232004BKG | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53616000BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53616004BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53632000BKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | Samsung semiconductor | | |
| KMM53632004BKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V | Samsung semiconductor | | |
| IDT74SSTU32865BKG | 28-BIT 1:2 REGISTERED BUFFER WITH PARITY | Integrated Device Technology | | |
| IDT74SSTU32D869BKG | 14-BIT 1:2 REGISTERED BUFFER WITH PARITY | Integrated Device Technology | | |
| JXWBKG-1-113-111 | Reflective Switches 0.02 to 18GHz | American Accurate Components, Inc. | | |
| JXWBKG-1-123-111 | Absorptive Switches 0.02 to 18GHz | American Accurate Components, Inc. | | |
| JXWBKG-1-213-111 | Reflective Switches 0.02 to 18GHz | American Accurate Components, Inc. | | |
| JXWBKG-1-214-11 | Reflective Switches 0.02 to 18GHz | American Accurate Components, Inc. | | |
