Компонент | Описание | Производитель | PDF | Buy |
CM50TF-12H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM50TF-12H | Six-IGBT IGBTMOD 50 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM50TF-24H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM50TF-24H | Six-IGBT IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM50TF-28H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM50TF-28H | Six-IGBT IGBTMOD 50 Amperes/1400 Volts | Powerex Power Semiconductors | | |
CM50TJ-24F | Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM50TL-24NF | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
LD2980CM50TR | Ultra low drop voltage regulators compatible with low ESR inhibit output capacitors | STMicroelectronics | | |
LD2981CM50TR | Ultra low drop voltage regulators with inhibit low ESR output capacitors compatible | STMicroelectronics | | |
LD2981CM50TR | VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | STMicroelectronics | | |
LD2980CM50TR | VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT LOW ESR OUTPUT CAPACITORS COMPATIBLE | STMicroelectronics | | |
CM50TU-24F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM50TU-24F | Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM50TU-24F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM50TU-24F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM50TU-24H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM50TU-24H | IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM50TU-24H | Six IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors | | |
CM50TU-24H_09 | IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |