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Компонент | Описание | Производитель | PDF | Buy |
TCZL62B | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators | Tak Cheong Electronics Holdings Co.,Ltd | | |
TCZL68B | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators | Tak Cheong Electronics Holdings Co.,Ltd | | |
NAND04GR4B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW3B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW4B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GR4B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GW3B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GW4B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GW4B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GW4B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GR3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR4B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GR4B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GW3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND08GR3B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR3B4CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR4B4CZL6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
NAND04GR3B2CZL6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
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