| Компонент | Описание | Производитель | PDF | Buy |
| HE551 | Low Noise Amplifier | BOWEI Integrated Circuits CO.,LTD. |  |  |
| CSNE551 | Solid State Sensors Closed Loop Current Sensors | Honeywell Solid State Electronics Center | | |
| PE5510 | 3,5mm Female 3-Port Field CALIBRATION TOOL | Pasternack Enterprises, Inc. | | |
| NE5510179A | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS | NEC | | |
| NE5510179A | 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS | California Eastern Labs | | |
| NE5510179A-T1 | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS | NEC | | |
| NE5510179A-T1 | 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS | California Eastern Labs | | |
| NE5510279A | 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | California Eastern Labs | | |
| NE5510279A | 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | NEC | | |
| NE5510279A-T1 | 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | NEC | | |
| NE5510279A-T1 | 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | California Eastern Labs | | |
| PE5511 | 3,5mm MALE 3-PORT FIELD CALIBRATION TOOL | Pasternack Enterprises, Inc. | | |
| NTE5511 | Silicon Controlled Rectifier (SCR) 5 Amp | NTE Electronics | | |
| NE5511279A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC | | |
| NE5511279A | 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | California Eastern Labs | | |
| NE5511279A-T1 | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC | | |
| NE5511279A-T1-A | 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | California Eastern Labs | | |
| NE5511279A-T1A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC | | |
| NE5511279A-T1A-A | 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | California Eastern Labs | | |
| NE5512 | Dual high-performance operational amplifier | NXP Semiconductors | | |
