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| Результаты поиска для EI-0962T | |
| Компонент | Описание | Производитель | PDF | Buy |
| KM68257EI-10 | 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |  |  |
| BS616UV4016EI-10 | Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit | Brilliance Semiconductor | | |
| GEI-100335 | ENCODER SIGNAL REPEATER | General Semiconductor | | |
| DSEI-12 | Fast Recovery Epitaxial Dioder (FRED) | IXYS Corporation | | |
| X2816CEI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| KM68257EI-12 | 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| X28C512EI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| X28C512EI-12 | 5V, Byte Alterable EEPROM | Intersil Corporation | | |
| X28C513EI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| X28HC64EI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| X28HC64EI-12 | 5 Volt, Byte Alterable EEPROM | Intersil Corporation | | |
| X28C010EI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| KM68V257EI-12 | 32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) | Samsung semiconductor | | |
| X28HC256EI-12 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| X28HC256EI-12 | 5V, Byte Alterable EEPROM | Intersil Corporation | | |
| X28HC256EI-12 | 5 Volt, Byte Alterable EEPROM | Intersil Corporation | | |
| MX29LV640BXEI-12 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY | Macronix International | | |
| MX29LV640TXEI-12 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY | Macronix International | | |
| MX29LV320TXEI-12 | 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY | Macronix International | | |
| MX29LV320BXEI-12 | 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY | Macronix International | | |
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