| Компонент | Описание | Производитель | PDF | Buy |
| FCA-210-FY2 | 10 AMPERES, DPDT | Tyco Electronics |  |  |
| IRFY210 | N-Channel MOSFET in a Hermetically sealed | Seme LAB | | |
| IRFY210C | N-Channel MOSFET in a Hermetically sealed | Seme LAB | | |
| RFY220 | N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. | Seme LAB | | |
| IRFY220 | N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. | Seme LAB | | |
| CD5FY221J03 | Miniature Dipped, Mica Capacitors | List of Unclassifed Manufacturers | | |
| CDS5FY221J03 | Miniature Dipped, Mica Capacitors | List of Unclassifed Manufacturers | | |
| TMP91FY22F | Quality And Reliability Assurance / Handling Precautions | Toshiba Semiconductor | | |
| IRFY230C | N-Channel MOSFET in a Hermetically sealed | Seme LAB | | |
| FY24 | SOUNDERS PIEZO CERAMIC BUZZERS | Dubilier | | |
| IRFY240 | N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | Seme LAB | | |
| IRFY240C | POWER MOSFET THRU-HOLE (TO-257AA | International Rectifier | | |
| IRFY240C | N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. | Seme LAB | | |
| IRFY240CM | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A) | International Rectifier | | |
| IRFY240M | N-Channel MOSFET in a Hermetically sealed | Seme LAB | | |
| CD5FY241J03 | Miniature Dipped, Mica Capacitors | List of Unclassifed Manufacturers | | |
| CDS5FY241J03 | Miniature Dipped, Mica Capacitors | List of Unclassifed Manufacturers | | |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) | Siemens Semiconductor Group | | |
| CFY25 | HiRel X-Band GaAs Low Noise / General Purpose MESFET | Infineon Technologies AG | | |
| V5A91FY25 | SPECIAL PURPOSE NETWORKS & VOLTAGE DIVIDERS | RCD COMPONENTS INC. | | |
