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| GT30J322 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
GT30J322 | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | Toshiba Semiconductor |  |  |
| *GT30J*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| GT30J101 | Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT30J101 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT30J121_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | Toshiba Semiconductor | | |
| GT30J301 | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT30J311 | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT30J322 | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | Toshiba Semiconductor | | |
| GT30J324 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT30J324 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT30J324_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
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