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| Результаты поиска для HGJM51111P00 | |
| Компонент | Описание | Производитель | PDF | Buy |
| HY51V18163HGJ | 1M x 16Bit EDO DRAM | Hynix Semiconductor |  |  |
| HY51V65163HGJ-45 | 4M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51V18163HGJ-5 | 1M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51V65163HGJ-5 | 4M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51VS18163HGJ-5 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns | Hynix Semiconductor | | |
| HY51VS17403HGJ-5 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns | Hynix Semiconductor | | |
| HY51V18163HGJ-6 | 1M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51V65163HGJ-6 | 4M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51V17403HGJ-6 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns | Hynix Semiconductor | | |
| HY51VS18163HGJ-6 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns | Hynix Semiconductor | | |
| HY51VS17403HGJ-6 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns | Hynix Semiconductor | | |
| HY51V18163HGJ-7 | 1M x 16Bit EDO DRAM | Hynix Semiconductor | | |
| HY51V17403HGJ-7 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns | Hynix Semiconductor | | |
| HY51VS18163HGJ-7 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns | Hynix Semiconductor | | |
| HY51VS17403HGJ-7 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns | Hynix Semiconductor | | |
| UPD70F3217HGJ-UEN | 32-Bit Single-Chip Microcontrollers | NEC | | |
| UPD70F3218HGJ-UEN | 32-Bit Single-Chip Microcontrollers | NEC | | |
| RT9198-1HGJ3 | 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator | Richtek Technology Corporation | | |
| RT9198-2HGJ3 | 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator | Richtek Technology Corporation | | |
| RT9198A-1HGJ3 | 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator | Richtek Technology Corporation | | |
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