Результаты поиска для K4R4016

Компонент	Описание	Производитель	PDF	Buy
K4R441869A	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869AM-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung semiconductor
K4R441869AM-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung semiconductor
K4R441869AM-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung semiconductor
K4R441869AN-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung semiconductor
K4R441869AN-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung semiconductor
K4R441869AN-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung semiconductor
K4R441869B-MCG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor
K4R441869B-MCK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor
K4R441869B-MCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor
K4R441869B-NCG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor
K4R441869B-NCK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor
K4R441869B-NCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung semiconductor

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