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Компонент | Описание | Производитель | PDF | Buy |
K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | | |
K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | | |
K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | | |
K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | | |
K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R441869B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
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