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Компонент | Описание | Производитель | PDF | Buy |
H02N60E | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
H03N60E | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
H05N60E | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
H04N60E | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
H07N60E | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
MTB3N60E | TMOS POWER FET 3.0 AMPERES 600 VOLTS | Motorola, Inc | | |
MTB6N60E | TMOS POWER FET 6.0 AMPERES 600 VOLTS | Motorola, Inc | | |
MTD1N60E | TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM | Motorola, Inc | | |
MTP2N60E | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS | Motorola, Inc | | |
MTP3N60E | TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS | Motorola, Inc | | |
MTP6N60E | TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS | Motorola, Inc | | |
MTW8N60E | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM | Motorola, Inc | | |
MTW6N60E | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | Motorola, Inc | | |
MGP4N60E | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
MGP4N60E | Insulated Gate Bipolar Transistor | ON Semiconductor | | |
PHB2N60E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
PHB4N60E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
PHB6N60E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
PHB7N60E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
PHB9N60E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
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