| Компонент | Описание | Производитель | PDF | Buy |
| 1N60P | GERMANIUM DIODES | Daesan Electronics Corp. |  |  |
| 1N60P | SMALL SIGNAL SCHOTTKY DIODES | Changzhou Shunye Electronics Co.,Ltd. | | |
| 1N60P | SMALL SIGNAL SCHOTTKY DIODE | Diotech Company. | | |
| 1N60P | Schottky Barrier Diode | Formosa MS | | |
| 1N60P | SMALL SIGNAL SCHOTTKY DIODES | Galaxy Semi-Conductor Holdings Limited | | |
| 1N60P | TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES | Dc Components | | |
| 1N60P | Small Signal Schottky Diodes | Shenzhen Luguang Electronic Technology Co., Ltd | | |
| 1N60P | Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS | Weitron Technology | | |
| 1N60P | POINT CONTACT GERMANIUM DIODES | SEMTECH ELECTRONICS LTD. | | |
| 1N60P | SMALL SIGNAL SCHOTTKY DIODES | Jinan Jingheng (Group) Co.,Ltd | | |
| 1N60P | Schottky Barrier Rectifier | Micro Commercial Components | | |
| 1N60P | Schottky Barrier Rectifier | Tiger Electronic Co.,Ltd | | |
| 1N60P | POINT CONTACT GERMANIUM DIODE | Semtech Corporation | | |
| 1N60P | 1.2A, 600V N-CHANNEL POWER MOSFET | Unisonic Technologies | | |
| L2N60P | 600V N-Channel MOSFET Low gane charge | Leshan Radio Company | | |
| KF2N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KF3N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KF5N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| KF8N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC(Korea Electronics) | | |
| TC1N60P | 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes | Tak Cheong Electronics Holdings Co.,Ltd | | |
