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| Результаты поиска для P06NF06 | |
| Компонент | Описание | Производитель | PDF | Buy |
| IPP06N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG |  |  |
| CEP06N5 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Chino-Excel Technology | | |
| CJP06N60 | Power filed Effect Transistor | Jiangsu Changjiang Electronics Technology Co., Ltd | | |
| SGP06N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SKP06N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKP06N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKP06N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SPP06N60C3 | CoolMOSTM Power Transistor Features New revolutionary high voltage technology | Infineon Technologies AG | | |
| FMP06N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| FMP06N60ES | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| IGP06N60T | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology | Infineon Technologies AG | | |
| IKP06N60T | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology | Infineon Technologies AG | | |
| IGP06N60T | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology | Infineon Technologies AG | | |
| NDP06N60Z | NDP06N60Z | ON Semiconductor | | |
| NDP06N60ZG | NDP06N60Z | ON Semiconductor | | |
| SGP06N60_07 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| NDP06N62Z | N-Channel Power MOSFET 620 V, 0.98 , | ON Semiconductor | | |
| NDP06N62ZG | N-Channel Power MOSFET 620 V, 0.98 , | ON Semiconductor | | |
| SPP06N80C3 | Cool MOS Power Transistor | Infineon Technologies AG | | |
| SPP06N80C3 | CoolMOSTM Power Transistor | Infineon Technologies AG | | |
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