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Компонент | Описание | Производитель | PDF | Buy |
RFP12N10 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs | Intersil Corporation | | |
IXGP12N100 | IGBT | IXYS Corporation | | |
IXGP12N100A | IGBT | IXYS Corporation | | |
IXGP12N100AU1 | IGBT - Combi Pack | IXYS Corporation | | |
IXGP12N100U1 | IGBT - Combi Pack | IXYS Corporation | | |
PHP12N10E | PowerMOS transistor | NXP Semiconductors | | |
MTP12N10E | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM | Motorola, Inc | | |
PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | NXP Semiconductors | | |
PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | NXP Semiconductors | | |
RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Fairchild Semiconductor | | |
RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Intersil Corporation | | |
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